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MAX6604 TEA2025 N74F14N H087B GRM31CR6 X40414 A51A46F XXXJX
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 PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220AB TYPE: BUZ50A
HIGH VOLTAGE POWER MOSFET N-CHANNEL
ABSOLUTE MAXIMUM RATING: Drain - Source Voltage Drain - Gate Voltage Drain Current - Continuous Drain Current - Pulsed Gate - Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case ELECTRICAL CHARACTERISTICS TA @ 25C Parameters Symbol Test Conditions Drain Source BVDSS VGS = 0V, ID = .25mA Breakdown Voltage Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mA Gate - Body Leakage Current Zero Gate Voltage Drain Current On State Drain Current Drain Source OnResistance Forward Transconductance Drain-Source On Voltage Drain-Source-On Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS IDSS ID(on) rDS(on) gFS VDS(on) VDS(on) Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1 MHz 2100 120 50 VGS = 10V, ID = 1.5A VDS = 25V, ID = 1.5A 0.7 5.0 VGS = 20V, VDS = 0V VDS = 1000V, VGS = 0V, VDS = 1000V, VGS = 0V, TJ = 125C VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 1000 1000 2.5 10 20 75 -55 to +150 Vdc Vdc Adc Adc Vdc Watts Adc C C
Min 1000 2.1
Typ
Max
Unit Vdc Vdc nA mA mA Adc Ohms mhos Vdc Vdc pF pF pF
4.0 100 0.25 1.0
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TYPE: BUZ50A Drain Source Diode Characteristics Forward On Voltage IF = 5.0A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge Total Gate Charge Gate - Source Charge Gate - Drain Charge IF = 2.5A diF /dt = 100A/s, VGS = 0V VR = 100V Symbol VSD trr Qrr Qg Qgs Qgd Min Typ Max 1.3 Units Vdc ns C nC nC nC
2000 15
Switching Characteristics Turn-On Time Turn-Off Time Delay Time (Turn On) Rise Time Delay Time (Turn Off) Fall Time VDD = 30V, ID = 2.0A VGS = 10V, RGS = 50 Rgen = 50
Symbol ton toff td(on) tr td(off) tf
Min
Typ
Max
Units
45 60 140 80
ns ns ns ns
Thermal Characteristics Junction To Case Junction To Ambient Internal Package Inductance Internal Drain Inductance Internal Source Inductance
Symbol RJC RJA Symbol Ld Ls Typ 4.5 7.5 Max
Units C/W C/W Units nH nH
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